Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Zero-net-strain multiquantum well lasersSELTZER, C. P; PERRIN, S. D; TATHAM, M. C et al.Electronics Letters. 1991, Vol 27, Num 14, pp 1268-1270, issn 0013-5194Article

Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxySOBIERSIERSKI, Z; CLARK, S. A; WILLIAMS, R. H et al.Applied surface science. 1992, Vol 56-58, pp 703-707, issn 0169-4332, bConference Paper

Room-temperature optical nonlinearities of GaInAs/AllnAs and GaAIInAs/AllnAs multiple quantum wells and integrated-mirror etalons at 1.3 μmHSU, C. C; MCGINNIS, B. P; SOKOLOFF, J. P et al.Journal of applied physics. 1991, Vol 70, Num 10, pp 5615-5618, issn 0021-8979, 1Article

Effect of conduction-band discontinuity on lasing characteristics of 1.5 μm InGaAs/In(Ga)AlAs MQW-FP lasersWAKATSUKI, A; KAWAMURA, Y; NOGUCHI, Y et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 383-386, issn 1041-1135Article

40-GHz bandwith InGAAs/InGaAs multiple quantum well optical intensity modulatorMITOMI, O; KOTAKA, I; WAKITA, K et al.Applied optics. 1992, Vol 31, Num 12, pp 2030-2035, issn 0003-6935Article

High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GhzWAKITA, K; KOTAKA, I; ASAI, H et al.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 29-31Article

InGaAs/In(AlGa)As RHET's with InAs pseudomorphic baseIMAMURA, K; ADACHIHARA, T; MORI, T et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 479-483, issn 0018-9383Article

Influence of surface layers on the RF-performance of AlInAs-GaInAs HFET'sDICKMANN, J; DÄMBKES, H; NICKEL, H et al.IEEE microwave and guided wave letters. 1992, Vol 2, Num 12, pp 472-474Article

Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiencyDEVAUX, F; BIGAN, E; ALLOVON, M et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2773-2775, issn 0003-6951Article

Photodiode Métal-Semiconducteur-Métal (MSM) AlInAs/GaInAs pour transmission sur fibre optique = AlInAs/GaInAs Metal-Semiconductor-Metal (MSM) photodiode for optical fiber transmissionTemmar, Abdelkader; Alquie, Claude.1992, 192 p.Thesis

An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHzKAGAWA, T; ASAI, H; KAWAMURA, Y et al.IEEE Photonics technology letters. 1991, Vol 3, Num 9, pp 815-817Article

Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHzWAKITA, K; KOTAKA, I; MITOMI, O et al.IEEE Photonics technology letters. 1991, Vol 3, Num 2, pp 138-140Article

Improved breadown of AllNAs/InGaAs heterojunction bipolar transistorsFULLOWAN, T. R; PEARTON, S. J; KOPF, R. F et al.Electronics Letters. 1991, Vol 27, Num 25, pp 2340-2341, issn 0013-5194Article

Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriersWOOD, T. H; CHANG, T. Y; PASTALAN, J. Z et al.Electronics Letters. 1991, Vol 27, Num 3, pp 257-259, issn 0013-5194Article

Novel etching technique for a buried heterostructure GaInAs/AIgaInAs quantum-well laser diodeKASUKAWA, A; BHAT, R; CANEAU, C et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1269-1271, issn 0003-6951Article

InAlAs/InGaAs/InP junction HEMTsBOOS, J. B; BINARI, S. C; KRUPPA, W et al.Electronics Letters. 1990, Vol 26, Num 15, pp 1172-1173, issn 0013-5194Article

Monolithic InP cascode HEMT distributed amplifier from 5 to 40 GHzYUEN, C; PAO, Y. C; DAY, M et al.Electronics Letters. 1990, Vol 26, Num 17, pp 1411-1412, issn 0013-5194Article

Thermodynamic calculations of congruent vaporization in III-V systems ; applications to the In-As, Ga-As and Ga-In-As systemsJIAN-YUN SHEN; CHATILLON, C.Journal of crystal growth. 1990, Vol 106, Num 4, pp 543-552, issn 0022-0248Article

20-GHz high-efficiency AlInAs-GaInAs on InP power HEMTMATLOUBIAN, M; BROWN, A. S; NGUYEN, L. D et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 5, pp 142-144, issn 1051-8207Article

Magnetotransport measurements on an In_0.52AI_0.48As/In_0.65Ga_0.35As single quantum wellKIM, T. W; JUNG, M; LEE, J. I et al.Journal of materials science letters. 1993, Vol 12, Num 8, pp 567-569, issn 0261-8028Article

Single barrier varactors for submillimeter wave power generationNILSEN, S. M; GRÖNQVIST, H; HJELMGREN, H et al.IEEE transactions on microwave theory and techniques. 1993, Vol 41, Num 4, pp 572-580, issn 0018-9480Article

Effect of strain on microwave noise characteristics in In_0.52Al_0.48As/In_xGa_1-xAs (0.53≤ x ≤ 0.80) HEMTsCHOUGH, K. B; HONG, W.-P; FLOREZ, L et al.Electronics Letters. 1993, Vol 29, Num 15, pp 1338-1340, issn 0013-5194Article

Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT'sMADJID HAFIZI; STANCHINA, W. E; METZGER, R. A et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 9, pp 1583-1588, issn 0018-9383Article